CONFINED ELECTRON-STATES IN ULTRATHIN ALAS SINGLE QUANTUM-WELLS UNDER PRESSURE

被引：17

作者：

LEROUX, M

GRANDJEAN, N

CHASTAINGT, B

DEPARIS, C

NEU, G

MASSIES, J

机构：

[1] Laboratoire de Physique du Solide et Energie Solaire, CNRS

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.45.11846

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The low-temperature direct and indirect optical transitions in double-barrier Al0.3Ga0.7As/AlAs/GaAs single quantum wells, with AlAs widths of 0, 1, and 2 monolayers, have been studied as a function of pressure. It is shown that intense type-II recombinations occur under pressure in AlAs-bordered wells, due to X electron localization in the wells formed by the ultrathin AlAs layers. A fairly accurate description of the luminescence line energies and relative intensities is obtained over the whole pressure range investigated, with use of the envelope-function formalism.

引用

页码：11846 / 11853

页数：8

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