DOSE ENHANCEMENT EFFECTS IN MOSFET ICS EXPOSED IN TYPICAL CO-60 FACILITIES

被引：23

作者：

KELLY, JG ^{[1
]}

LUERA, TF ^{[1
]}

POSEY, LD ^{[1
]}

VEHAR, DW ^{[1
]}

BROWN, DB ^{[1
]}

DOZIER, CM ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1983年 / 30卷 / 06期

关键词：

D O I：

10.1109/TNS.1983.4333143

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：4388 / 4393

页数：6

相关论文

共 8 条

[1] REDUCING ERRORS IN DOSIMETRY CAUSED BY LOW-ENERGY COMPONENTS OF CO-60 AND FLASH X-RAY SOURCES
BROWN, DB
DOZIER, CM
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) : 1996 - 1999
[2] AN IC COMPATIBLE IONIZING-RADIATION DETECTOR
DAWES, WR
SCHWANK, JR
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) : 4152 - 4155
[3] ANALYTICAL PHOTO-COMPTON DEPOSITION PROFILES
DELLIN, TA
MACCALLUM, CJ
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) : 1844 - 1849
[4] DIFFUSION EQUATION MODEL FOR KILOVOLT ELECTRON-TRANSPORT AT X-IRRADIATED INTERFACES
GARTH, JC
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1978, 25 (06) : 1598 - 1606
[5] THE ROLE OF SCATTERED RADIATION IN THE DOSIMETRY OF SMALL DEVICE STRUCTURES
GARTH, JC
BURKE, EA
WOOLF, S
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) : 1459 - 1464
[6] DOSE ENHANCEMENT EFFECTS IN SEMICONDUCTOR-DEVICES
LONG, DM
MILLWARD, DG
WALLACE, J
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) : 1980 - 1984
[7] GAMMA-DOSE DISTRIBUTIONS AT AND NEAR INTERFACE OF DIFFERENT MATERIALS
WALL, JA
BURKE, EA
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1970, NS17 (06) : 305 - &
[8] WALL JA, 1974, AFCRLTR004