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MOLECULAR-CLUSTER STUDIES OF DEFECTS IN SILICON LATTICES .3. DANGLING-BOND RECONSTRUCTION AT THE CORE OF A 90-DEGREES PARTIAL DISLOCATION IN SILICON

被引：16
作者：
BONAPASTA, AA
BATTISTONI, C
LAPICCIRELLA, A
TOMASSINI, N
ALTMANN, SL
LODGE, KW
机构：
[1] IST METODOL AVANZATE INORGAN, AREA RIC ROMA, I-00016 Monterotondo, ITALY
[2] UNIV OXFORD, DEPT MET & SCI MAT, OXFORD OX1 3PH, ENGLAND
来源：
PHYSICAL REVIEW B | 1988年 / 37卷 / 06期
关键词：
D O I：
10.1103/PhysRevB.37.3058
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：3058 / 3067
页数：10
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