GAIN AND NOISE CHARACTERISTICS OF A 1.5-MU-M NEAR-TRAVELING-WAVE SEMICONDUCTOR-LASER AMPLIFIER

被引：10

作者：

SIMON, JC ^{[1
]}

DOUSSIERE, P ^{[1
]}

POPHILLAT, L ^{[1
]}

FERNIER, B ^{[1
]}

机构：

[1] LABS MARCOUSSIS,F-91460 MARCOUSSIS,FRANCE

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 07期

关键词：

D O I：

10.1049/el:19890298

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：434 / 436

页数：3

共 7 条

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LANDOUSIES, B .

ELECTRONICS LETTERS, 1987, 23 (06) :254-256

[2]

GOLDSTEIN L, 1987, I PHYS C SER, V91, P211

[3] WAVELENGTH DEPENDENCE OF NOISE-FIGURE OF A TRAVELING-WAVE GAINASP-INP LASER-AMPLIFIER [J].

OBERG, MG ;

OLSSON, NA .

ELECTRONICS LETTERS, 1988, 24 (02) :99-100

[4] 1.5 MU-M GAINASP TRAVELING-WAVE SEMICONDUCTOR-LASER AMPLIFIER [J].

SAITOH, T ;

MUKAI, T .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (06) :1010-1020

[5] RECENT PROGRESS IN SEMICONDUCTOR-LASER AMPLIFIERS [J].

SAITOH, T ;

MUKAI, T .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1988, 6 (11) :1656-1664

[6]

Simon J. C., 1983, Journal of Optical Communications, V4, P51, DOI 10.1515/JOC.1983.4.2.51

[7] GAIN, POLARIZATION SENSITIVITY AND SATURATION POWER OF 1.5-MU-M NEAR-TRAVELING-WAVE SEMICONDUCTOR-LASER AMPLIFIER [J].

SIMON, JC ;

LANDOUSIES, B ;

BOSSIS, Y ;

DOUSSIERE, P ;

FERNIER, B ;

PADIOLEAU, C .

ELECTRONICS LETTERS, 1987, 23 (07) :332-334

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