RELATIONS BETWEEN THE REFRACTIVE-INDEX AND ENERGY-GAP OF SEMICONDUCTORS

被引：511

作者：

MOSS, TS

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1985年 / 131卷 / 02期

关键词：

ABSORPTION EDGE - OPTICAL ENERGY GAP - REFRACTIVE INDEX;

D O I：

10.1002/pssb.2221310202

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：415 / 427

页数：13

共 37 条

[21]

Moss TS., 1959, OPTICAL PROPERTIES S

[22] DIELECTRIC-CONSTANT AND OPTICAL CONFINEMENT IN HOMOSTRUCTURE PBSNTE DIODE-LASERS [J].

ORON, M ;

ZUSSMAN, A ;

KATZIR, A .

INFRARED PHYSICS, 1982, 22 (06) :317-322

[23] WAVE-NUMBER-DEPENDENT DIELECTRIC FUNCTION OF SEMICONDUCTORS [J].

PENN, DR .

PHYSICAL REVIEW, 1962, 128 (05) :2093-+

[24]

PHILLIPP HR, 1967, SEMICONDUCT SEMIMET, V3, pCH4

[25] ENERGY-GAP REFRACTIVE-INDEX RELATION - SOME OBSERVATIONS [J].

RAVINDRA, NM .

INFRARED PHYSICS, 1981, 21 (05) :283-285

[26] REFRACTIVE-INDEX DEPENDENCE ON OPTICAL GAP IN AMORPHOUS-SILICON .2. SI PREPARED BY CHEMICAL VAPOR-DEPOSITION [J].

RAVINDRA, NM ;

ANCE, C ;

FERRATON, JP ;

BERGER, JM ;

DECHELLE, F ;

ROBIN, S .

INFRARED PHYSICS, 1983, 23 (04) :223-232

[27] REFRACTIVE-INDEX DEPENDENCE ON OPTICAL GAP IN AMORPHOUS-SILICON .1. SI PREPARED BY GLOW-DISCHARGE [J].

RAVINDRA, NM ;

ANCE, C ;

COULIBALY, SP ;

DECHELLE, F ;

BERGER, JM ;

FERRATON, JP ;

DONNADIEU, A .

INFRARED PHYSICS, 1983, 23 (02) :99-108

[28] MODEL BASED STUDIES OF SOME OPTICAL AND ELECTRONIC-PROPERTIES OF NARROW AND WIDE GAP MATERIALS [J].

RAVINDRA, NM ;

BHARDWAJ, RP ;

KUMAR, KS ;

SRIVASTAVA, VK .

INFRARED PHYSICS, 1981, 21 (06) :369-381

[29] VARIATION OF REFRACTIVE-INDEX WITH ENERGY-GAP IN SEMICONDUCTORS [J].

RAVINDRA, NM ;

SRIVASTAVA, VK .

INFRARED PHYSICS, 1979, 19 (05) :603-604

[30] PENN GAP IN SEMICONDUCTORS [J].

RAVINDRA, NM ;

AULUCK, S ;

SRIVASTAVA, VK .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 93 (02) :K155-K160

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