RAPID THERMALLY PROCESSED FERROELECTRIC BI4TI3O12 THIN-FILMS

Polycrystalline Bi4Ti3O12 thin films having perovskite structure were successfully produced on platinum coated silicon substrates by the sol-gel technique. Crack-free and crystalline films of 5000 angstrom thickness were fabricated by spinning and post-deposition rapid thermal annealing treatment at 500-degrees-C for 20 s. The films exhibited good structural, dielectric, and ferroelectric properties. The measured dielectric constant and loss factor at a frequency of 100 kHz were 180 and 0.014 and remanent polarization and coercive field were 5.4 muC/cm2 and 135 kV/cm, respectively. The films showed good switching endurance under bipolar stressing at least up to 10(10) cycles.