MOBILE AND IMMOBILE LOCALIZED EXCITONS INDUCED BY THE STACKING-FAULT IN GASE

被引：24

作者：

SASAKI, Y

NISHINA, Y

机构：

来源：

PHYSICA B & C | 1981年 / 105卷 / 1-3期

关键词：

D O I：

10.1016/0378-4363(81)90212-6

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：45 / 49

页数：5

共 14 条

[1] EXCITONS IN GASE POLYTYPES [J].

BREBNER, JL ;

MOOSER, E .

PHYSICS LETTERS A, 1967, A 24 (05) :274-&

[2] INFLUENCE OF STACKING DISORDER ON WANNIER EXCITONS IN LAYERED SEMICONDUCTORS [J].

FORNEY, JJ ;

MASCHKE, K ;

MOOSER, E .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (11) :1887-1894

[3] TRANSVERSE ELECTROREFLECTANCE OF GASE AT FUNDAMENTAL ABSORPTION-EDGE [J].

ISHII, Y ;

SASAKI, Y ;

HAMAGUCHI, C ;

NAKAI, J .

SOLID STATE COMMUNICATIONS, 1975, 17 (04) :451-454

[4]

KAIFU Y, 1976, J PHYS SOC JAPAN, V40, P1378

[5] STACKING-FAULT SPLITTING OF EXCITON-STATES IN GASE [J].

KURODA, N ;

NISHINA, Y .

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS, 1976, 32 (01) :109-116

[6] EVIDENCE FOR EXCITON LOCALIZATION BY ALLOY FLUCTUATIONS IN INDIRECT-GAP GAAS1-XPX [J].

LAI, S ;

KLEIN, MV .

PHYSICAL REVIEW LETTERS, 1980, 44 (16) :1087-1090

[7] INFLUENCE OF STACKING DISORDER ON DC CONDUCTIVITY OF LAYERED SEMICONDUCTORS [J].

MASCHKE, K ;

OVERHOF, H .

PHYSICAL REVIEW B, 1977, 15 (04) :2058-2061

[8] INFLUENCE OF STACKING DISORDER ON ELECTRONIC PROPERTIES OF LAYERED SEMICONDUCTORS [J].

MASCHKE, K ;

SCHMID, P .

PHYSICAL REVIEW B, 1975, 12 (10) :4312-4315

[9] EFFECTS OF EXTERNAL MAGNETIC-FIELDS ON OPTICAL SPIN ORIENTATION IN GASE [J].

MINAMI, F ;

OKA, Y ;

KUSHIDA, T .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1976, 41 (01) :100-108

[10] BAND-GAP EXCITONS IN GALLIUM SELENIDE [J].

MOOSER, E ;

SCHLUTER, M .

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS, 1973, B 18 (01) :164-208

← 1 2 →