学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
ELECTROREFLECTANCE OF SI-MOS
被引:17
作者
:
MISAWA, K
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV, FAC ENGN, DEPT ELECTR, SUITA 565, OSAKA, JAPAN
OSAKA UNIV, FAC ENGN, DEPT ELECTR, SUITA 565, OSAKA, JAPAN
MISAWA, K
[
1
]
MORITANI, A
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV, FAC ENGN, DEPT ELECTR, SUITA 565, OSAKA, JAPAN
OSAKA UNIV, FAC ENGN, DEPT ELECTR, SUITA 565, OSAKA, JAPAN
MORITANI, A
[
1
]
NAKAI, J
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV, FAC ENGN, DEPT ELECTR, SUITA 565, OSAKA, JAPAN
OSAKA UNIV, FAC ENGN, DEPT ELECTR, SUITA 565, OSAKA, JAPAN
NAKAI, J
[
1
]
机构
:
[1]
OSAKA UNIV, FAC ENGN, DEPT ELECTR, SUITA 565, OSAKA, JAPAN
来源
:
JAPANESE JOURNAL OF APPLIED PHYSICS
|
1976年
/ 15卷
/ 07期
关键词
:
D O I
:
10.1143/JJAP.15.1309
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:1309 / 1316
页数:8
相关论文
共 24 条
[21]
SERAPHIN BO, 1972, SEMICONDUCT SEMIMET, V9, pCH1
[22]
SZE SM, 1969, PHYSICS SEMICONDUCTO, pCH9
[23]
AN INVESTIGATION OF SURFACE STATES AT A SILICON SILICON OXIDE INTERFACE EMPLOYING METAL OXIDE SILICON DIODES
TERMAN, LM
论文数:
0
引用数:
0
h-index:
0
TERMAN, LM
[J].
SOLID-STATE ELECTRONICS,
1962,
5
(SEP-O)
: 285
-
299
[24]
TYAGAI VA, 1973, SOV PHYS SEMICOND+, V6, P1968
←
1
2
3
→
共 24 条
[21]
SERAPHIN BO, 1972, SEMICONDUCT SEMIMET, V9, pCH1
[22]
SZE SM, 1969, PHYSICS SEMICONDUCTO, pCH9
[23]
AN INVESTIGATION OF SURFACE STATES AT A SILICON SILICON OXIDE INTERFACE EMPLOYING METAL OXIDE SILICON DIODES
TERMAN, LM
论文数:
0
引用数:
0
h-index:
0
TERMAN, LM
[J].
SOLID-STATE ELECTRONICS,
1962,
5
(SEP-O)
: 285
-
299
[24]
TYAGAI VA, 1973, SOV PHYS SEMICOND+, V6, P1968
←
1
2
3
→