IMPROVED GAAS ALGAAS QUANTUM-WELL HETEROSTRUCTURES BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：6

作者：

SCHAUS, CF ^{[1
]}

SHEALY, JR ^{[1
]}

EASTMAN, LF ^{[1
]}

COOMAN, BC ^{[1
]}

CARTER, CB ^{[1
]}

机构：

[1] CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 02期

关键词：

Compendex;

D O I：

10.1063/1.336637

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

11

引用

收藏

页码：678 / 680

页数：3

相关论文

共 11 条

[1] MONOLAYER HETEROINTERFACES AND THIN-LAYERS (APPROXIMATELY-10 A) IN ALXGA1-XAS-GAAS SUPERLATTICES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
BROWN, JM
HOLONYAK, N
LUDOWISE, MJ
DIETZE, WT
LEWIS, CR
[J]. ELECTRONICS LETTERS, 1984, 20 (05) : 204 - 205
[2] QUANTUM WELL AND MODULATION DOPED GAAS - GA1-XALXAS HETEROSTRUCTURES
FRIJLINK, PM
MALUENDA, J
[J]. JOURNAL DE PHYSIQUE, 1982, 43 (NC-5): : 185 - 191
[3] STRUCTURE OF GAAS-GA1-XALXAS SUPER-LATTICES GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION
GRIFFITHS, RJM
CHEW, NG
CULLIS, AG
JOYCE, GC
[J]. ELECTRONICS LETTERS, 1983, 19 (23) : 988 - 990
[4] HERSEE JD, 1984, J CRYST GROWTH, V68, P383
[5] HOUNG YM, 1984, JUN EL MAT C SANT BA
[6] PHOTOLUMINESCENCE OF ALGAAS GAAS QUANTUM WELLS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
KAWAI, H
KANEKO, K
WATANABE, N
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) : 463 - 467
[7] LONG-RANGE ORDER IN ALXGA1-XAS
KUAN, TS
KUECH, TF
WANG, WI
WILKIE, EL
[J]. PHYSICAL REVIEW LETTERS, 1985, 54 (03) : 201 - 204
[8] GROWTH OF MULTIPLE THIN-LAYER STRUCTURES IN THE GAAS-ALAS SYSTEM USING A NOVEL VPE REACTOR
LEYS, MR
VANOPDORP, C
VIEGERS, MPA
TALENVANDERMHEEN, HJ
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 431 - 436
[9] INVESTIGATION OF THE PROPERTIES OF ORGANOMETALLIC VAPOR-PHASE EPITAXIALLY GROWN ALGAAS/GAAS HETEROSTRUCTURES USING RAMAN-SCATTERING
SHEALY, JR
SCHAUS, CF
WICKS, GW
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (02) : 125 - 127
[10] SHEALY JR, 1983, JPN J APPL PHYS, V10, pL639