GROWTH OF GROUP-III NITRIDES ON SI(111) BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY

被引：32

作者：

STEVENS, KS ^{[1
]}

OHTANI, A ^{[1
]}

SCHWARTZMAN, AF ^{[1
]}

BERESFORD, R ^{[1
]}

机构：

[1] BROWN UNIV,CTR ADV MAT RES,PROVIDENCE,RI 02912

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 02期

关键词：

D O I：

10.1116/1.587039

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Wurtzitic single-crystal GaN and polycrystalline (columnar) InGaN have been grown on the Si(111) face in an electron cyclotron resonance plasma-assisted molecular beam epitaxy process. Reflection high-energy electron diffraction shows registry of the nitride basal-plane triangular lattice with respect to the Si(111) substrate triangular network. Plan-view transmission electron microscopy images reveal crystalline or polycrystalline GaN structure depending on growth temperature. High-resolution x-ray rocking curves of the (0002) peak were as narrow as 30 min for a 0.6-mum GaN film grown on a thin AlN buffer layer at 750-degrees-C.

引用

页码：1186 / 1189

页数：4

共 8 条

[1] CRYSTAL INTERFACES [J].