EFFECT OF CHARGED SURFACES ON OPTICAL ABSORPTION EDGE

被引:54
作者
REDFIELD, D
机构
来源
PHYSICAL REVIEW | 1965年 / 140卷 / 6A期
关键词
D O I
10.1103/PhysRev.140.A2056
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
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页码:2056 / &
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[11]   OPTICAL ABSORPTION OF GALLIUM ARSENIDE BETWEEN 0.6 AND 2.75 EV [J].
STURGE, MD .
PHYSICAL REVIEW, 1962, 127 (03) :768-+
[12]   OPTICAL ABSORPTION IN PRESENCE OF A UNIFORM FIELD [J].
THARMALINGAM, K .
PHYSICAL REVIEW, 1963, 130 (06) :2204-&
[13]  
WATKINS TB, 1960, PROGRESS SEMICONDUCT, V5, P1
[14]   EFFECT OF A HIGH ELECTRIC FIELD ON ABSORPTION OF LIGHT BY PBI2 AND HGI2 [J].
WILLIAMS, R .
PHYSICAL REVIEW, 1962, 126 (02) :442-&