ION-IMPLANTATION THROUGH ALUMINUM THIN-FILM DEPOSITED ON IRON

被引：17

作者：

IWAKI, M

OKABE, Y

TAKAHASHI, K

YOSHIDA, K

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1983年 / 209卷 / MAY期

关键词：

D O I：

10.1016/0167-5087(83)90903-1

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：941 / 945

页数：5

共 5 条

[1]

HIRVONEN JK, 1980, ION IMPLANTATION TRE, V18

[2] COMPARISON BETWEEN PROPERTIES OF STEELS IMPLANTED WITH UNSEPARATED IONS AND A SELECTED ION [J].

IWAKI, M ;

OKABE, Y ;

NAMBA, S ;

YOSHIDA, K .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1981, 189 (01) :155-159

[3] ION-BEAM-INDUCED REACTIONS IN METAL-SEMICONDUCTOR AND METAL-METAL THIN-FILM STRUCTURES [J].

MAYER, JW ;

TSAUR, BY ;

LAU, SS ;

HUNG, LS .

NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :1-13

[4] ELECTROCHEMICAL PROPERTIES OF ION-IMPLANTED STEEL [J].

OKABE, Y ;

IWAKI, M ;

TAKAHASHI, K ;

HAYASHI, H ;

NAMBA, S ;

YOSHIDA, K .

SURFACE SCIENCE, 1979, 86 (JUL) :257-263

[5] ELECTROCHEMICAL PROPERTIES OF ION-IMPLANTED METAL-ELECTRODES [J].

TAKAHASHI, K ;

OKABE, Y ;

IWAKI, M .

NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :1009-1015

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