RECENT PROGRESS ON LADA GROWTH OF HGCDTE AND CDTE EPITAXIAL LAYERS

被引：71

作者：

CHEUNG, JT ^{[1
]}

MAGEE, T ^{[1
]}

机构：

[1] ADV RES & APPLICAT CORP, SUNNYVALE, CA 94086 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1983年 / 1卷 / 03期

关键词：

D O I：

10.1116/1.572276

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1604 / 1607

页数：4

共 9 条

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[3] MOLECULAR-BEAM EPITAXY OF CDTE AND CDXHG1-XTE
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[4] SELECTIVE ETCHING OF GALLIUM ARSENIDE CRYSTALS IN H2SO4-H2O2-H2O SYSTEM
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[5] MATTHEWS JW, 1978, DISLOCATIONS SOLIDS, V2
[6] OPTICAL-PROPERTIES OF POLYCRYSTALLINE CDTE-FILMS
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[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) : 4231 - 4237
[7] RONSILLE R, 1982, J CRYST GROWTH, V56, P101
[8] SCHETZINA JF, 1982, DARPA CONTRACT REV
[9] VACUUM DEPOSITION BY HIGH-ENERGY LASER WITH EMPHASIS ON BARIUM TITANATE FILMS
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