HIGH-GAIN AND VERY SENSITIVE PHOTONIC SWITCHING DEVICE BY INTEGRATION OF HETEROJUNCTION PHOTOTRANSISTOR AND LASER DIODE

被引：24

作者：

NODA, S

TAKAYAMA, T

SHIBATA, K

SASAKI, A

机构：

[1] Department of Electrical Engineering, Kyoto University, Kyoto

[2] Department of Electrical Engineering, Kyoto University, Electronics Research Laboratory, Matsushita Electronics Corporation, 4-1, Mizuharz Itami, Hyogo

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 02期

关键词：

D O I：

10.1109/16.121687

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A photonic switching device with very large gain and high sensitivity has been developed by the vertical and direct integration of a heterojunction phototransistor and a laser diode. The device switches on with very low input power of approximately 10 nW and emits output power of approximately 4 mW under continuous-wave condition at room temperature. The minimum energy for switching on is estimated to be as low as 80 fJ. The internal optical feedback of the device is quantitatively discussed to interpret the low-power operation for the switch-on.

引用

页码：305 / 312

页数：8

共 23 条

[1]

ALFEROV ZI, 1972, SOV PHYS SEMICOND+, V5, P1314

[2] MONOLITHIC INTEGRATION OF A GAALAS BURIED-HETEROSTRUCTURE LASER AND A BIPOLAR PHOTO-TRANSISTOR [J].