WAVELENGTH DEPENDENCE OF CHARACTERISTICS OF 1.2-1.55 MU-M INGAASP/INP P-SUBSTRATE BURIED CRESCENT LASER-DIODES

被引：23

作者：

KAKIMOTO, S ^{[1
]}

TAKEMOTO, A ^{[1
]}

SAKAKIBARA, Y ^{[1
]}

NAKAJIMA, Y ^{[1
]}

FUJIWARA, M ^{[1
]}

NAMIZAKI, H ^{[1
]}

HIGUCHI, H ^{[1
]}

YAMAMOTO, Y ^{[1
]}

机构：

[1] MITSUBISHI ELECT CORP,KITA ITAMI WORKS,ITAMI,HYOGO 664,JAPAN

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1988年 / 24卷 / 01期

关键词：

D O I：

10.1109/3.90

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：29 / 35

页数：7

共 34 条

[1] THE TEMPERATURE-DEPENDENCE OF THE EFFICIENCY AND THRESHOLD CURRENT OF IN1-XGAXASYP1-Y LASERS RELATED TO INTERVALENCE BAND ABSORPTION [J].

ADAMS, AR ;

ASADA, M ;

SUEMATSU, Y ;

ARAI, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) :L621-L624

[2] THE EFFECTS OF LOSS AND NONRADIATIVE RECOMBINATION ON THE TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT IN 1.5-1.6-MU-M GALNASP/INP LASERS [J].

ASADA, M ;

SUEMATSU, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (06) :917-923

[3] THE TEMPERATURE-DEPENDENCE OF THE THRESHOLD CURRENT OF GAINASP-INP DH LASERS [J].

ASADA, M ;

ADAMS, AR ;

STUBKJAER, KE ;

SUEMATSU, Y ;

ITAYA, Y ;

ARAI, S .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (05) :611-619

[4] HIGH-TEMPERATURE OPERATION OF 1.55-MU-M INGAASP DOUBLE-CHANNEL BURIED-HETEROSTRUCTURE LASERS GROWN BY LPE [J].

BESOMI, P ;

WILSON, RB ;

BROWN, RL ;

DUTTA, NK ;

WRIGHT, PD ;

NELSON, RJ .

ELECTRONICS LETTERS, 1984, 20 (10) :417-419

[5] INGAASP-INP DOUBLE-HETEROSTRUCTURE LASERS - SIMPLE EXPRESSIONS FOR WAVE CONFINEMENT, BEAMWIDTH, AND THRESHOLD CURRENT OVER WIDE RANGES IN WAVELENGTH (1.1-1.65 MU-M) [J].

BOTEZ, D .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :178-186

[6] VARIATION OF INTERVALENCE BAND ABSORPTION WITH HOLE CONCENTRATION IN P-TYPE INP [J].

CASEY, HC ;

CARTER, PL .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :82-83

[7] 1.55 MU-M INGAASP LOW-THRESHOLD BURIED-CRESCENT INJECTION-LASER [J].

CHENG, WH ;

PERILLO, L ;

FOROUHAR, S ;

KIM, OK ;

JIANG, CL ;

SHEEM, SK .

ELECTRONICS LETTERS, 1985, 21 (19) :832-834

[8] EFFECT OF ACTIVE LAYER THICKNESS ON DIFFERENTIAL QUANTUM EFFICIENCY OF 1.55-MUM INGAASP BURIED CRESCENT INJECTION-LASERS [J].

CHENG, WH ;

RENNER, D .

APPLIED PHYSICS LETTERS, 1986, 49 (20) :1322-1324

[9]

HIGUCHI H, 1982, APPL PHYS LETT, V45, P320

[10]

HIGUCHI H, 1985, REV LASER ENG, V13, P156

← 1 2 3 4 →