1.55 MU-M INGAASP LOW-THRESHOLD BURIED-CRESCENT INJECTION-LASER

被引：4

作者：

CHENG, WH

PERILLO, L

FOROUHAR, S

KIM, OK

JIANG, CL

SHEEM, SK

机构：

来源：

ELECTRONICS LETTERS | 1985年 / 21卷 / 19期

关键词：

D O I：

10.1049/el:19850588

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：832 / 834

页数：3

共 8 条

[1] HIGH-TEMPERATURE OPERATION OF 1.55-MU-M INGAASP DOUBLE-CHANNEL BURIED-HETEROSTRUCTURE LASERS GROWN BY LPE [J].

BESOMI, P ;

WILSON, RB ;

BROWN, RL ;

DUTTA, NK ;

WRIGHT, PD ;

NELSON, RJ .

ELECTRONICS LETTERS, 1984, 20 (10) :417-419

[2] POSITION OF THE DEGRADATION AND THE IMPROVED STRUCTURE FOR THE BURIED CRESCENT INGAASP/INP (1.3 MU-M) LASERS [J].

HIRANO, R ;

OOMURA, E ;

HIGUCHI, H ;

SAKAKIBARA, Y ;

NAMIZAKI, H ;

SUSAKI, W ;

FUJIKAWA, K .

APPLIED PHYSICS LETTERS, 1983, 43 (02) :187-189

[3]

ISHIKAWA H, 1982, IEEE J QUANTUM ELECT, V18, P1704, DOI 10.1109/TMTT.1982.1131310

[4] INGAASP/INP (1.3-MU-M) BURIED-CRESCENT LASERS WITH SEPARATE OPTICAL CONFINEMENT [J].

LOGAN, RA ;

VANDERZIEL, JP ;

TEMKIN, H ;

HENRY, CH .

ELECTRONICS LETTERS, 1982, 18 (20) :895-896

[5]

MAXHAM KY, 1984, IEEE J LIGHTWAVE TEC, V2, P394

[6]

MITO I, 1983, J LIGHTWAVE TECHNOL, V1, P195

[7] INGAASP/INP BURIED CRESCENT LASER DIODE EMITTING AT 1.3 MU-M WAVELENGTH [J].

OOMURA, E ;

HIGUCHI, H ;

SAKAKIBARA, Y ;

HIRANO, R ;

NAMIZAKI, H ;

SUSAKI, W ;

IKEDA, K ;

FUJIKAWA, K .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (08) :866-874

[8] QUATERNARY 1.5 MU-M (INGAASP/INP) BURIED CRESCENT LASERS WITH SEPARATE OPTICAL CONFINEMENT [J].

VANDERZIEL, JP ;

TEMKIN, H ;

LOGAN, RA .

ELECTRONICS LETTERS, 1983, 19 (03) :113-115

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