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QUATERNARY 1.5 MU-M (INGAASP/INP) BURIED CRESCENT LASERS WITH SEPARATE OPTICAL CONFINEMENT
被引:14
作者
:
VANDERZIEL, JP
论文数:
0
引用数:
0
h-index:
0
VANDERZIEL, JP
TEMKIN, H
论文数:
0
引用数:
0
h-index:
0
TEMKIN, H
LOGAN, RA
论文数:
0
引用数:
0
h-index:
0
LOGAN, RA
机构
:
来源
:
ELECTRONICS LETTERS
|
1983年
/ 19卷
/ 03期
关键词
:
D O I
:
10.1049/el:19830081
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:113 / 115
页数:3
相关论文
共 8 条
[1]
LOW THRESHOLD CHANNELLED-SUBSTRATE BURIED CRESCENT INGAASP LASERS EMITTING AT 1.54 MU-M
[J].
DEVLIN, WJ
论文数:
0
引用数:
0
h-index:
0
DEVLIN, WJ
;
WALLING, RH
论文数:
0
引用数:
0
h-index:
0
WALLING, RH
;
FIDDYMENT, PJ
论文数:
0
引用数:
0
h-index:
0
FIDDYMENT, PJ
;
HOBBS, RE
论文数:
0
引用数:
0
h-index:
0
HOBBS, RE
;
MURRELL, D
论文数:
0
引用数:
0
h-index:
0
MURRELL, D
;
SPILLETT, RE
论文数:
0
引用数:
0
h-index:
0
SPILLETT, RE
;
STEVENTON, AG
论文数:
0
引用数:
0
h-index:
0
STEVENTON, AG
.
ELECTRONICS LETTERS,
1981,
17
(18)
:651
-653
[2]
DEVLIN WJ, 1981, I PHYS C SER, V63, P567
[3]
INGAASP/INP (1.3-MU-M) BURIED-CRESCENT LASERS WITH SEPARATE OPTICAL CONFINEMENT
[J].
LOGAN, RA
论文数:
0
引用数:
0
h-index:
0
LOGAN, RA
;
VANDERZIEL, JP
论文数:
0
引用数:
0
h-index:
0
VANDERZIEL, JP
;
TEMKIN, H
论文数:
0
引用数:
0
h-index:
0
TEMKIN, H
;
HENRY, CH
论文数:
0
引用数:
0
h-index:
0
HENRY, CH
.
ELECTRONICS LETTERS,
1982,
18
(20)
:895
-896
[4]
TEMPERATURE-DEPENDENCE OF INGAASP DOUBLE-HETEROSTRUCTURE LASER CHARACTERISTICS
[J].
NAHORY, RE
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Holmdel
NAHORY, RE
;
POLLOCK, MA
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Holmdel
POLLOCK, MA
;
DEWINTER, JC
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Holmdel
DEWINTER, JC
.
ELECTRONICS LETTERS,
1979,
15
(21)
:695
-696
[5]
TRANSVERSE-MODE CONTROL IN INGAASP-INP BURIED CRESCENT DIODE-LASERS
[J].
OOMURA, E
论文数:
0
引用数:
0
h-index:
0
OOMURA, E
;
HIGUCHI, H
论文数:
0
引用数:
0
h-index:
0
HIGUCHI, H
;
HIRANO, R
论文数:
0
引用数:
0
h-index:
0
HIRANO, R
;
NAMIZAKI, H
论文数:
0
引用数:
0
h-index:
0
NAMIZAKI, H
;
MUROTANI, T
论文数:
0
引用数:
0
h-index:
0
MUROTANI, T
;
SUSAKI, W
论文数:
0
引用数:
0
h-index:
0
SUSAKI, W
.
ELECTRONICS LETTERS,
1981,
17
(02)
:83
-84
[6]
EFFECT OF SUBSTRATE ORIENTATION ON THE LIQUID-SOLID DISTRIBUTION COEFFICIENTS FOR GAXIN1-XAS IN THE TEMPERATURE-RANGE 600-700-DEGREES-C
[J].
PEARSALL, TP
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
PEARSALL, TP
;
QUILLEC, M
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
QUILLEC, M
;
POLLACK, MA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
POLLACK, MA
.
APPLIED PHYSICS LETTERS,
1979,
35
(04)
:342
-344
[7]
LOW THRESHOLD 1.55 MU-M INGAASP LASERS DOUBLE CLAD WITH INGAASP CONFINING LAYERS
[J].
WESTBROOK, LD
论文数:
0
引用数:
0
h-index:
0
WESTBROOK, LD
;
NELSON, AW
论文数:
0
引用数:
0
h-index:
0
NELSON, AW
;
HATCH, CB
论文数:
0
引用数:
0
h-index:
0
HATCH, CB
.
ELECTRONICS LETTERS,
1981,
17
(25-2)
:952
-954
[8]
DIRECT OBSERVATION OF ELECTRON LEAKAGE IN INGAASP/INP DOUBLE HETEROSTRUCTURE
[J].
YAMAKOSHI, S
论文数:
0
引用数:
0
h-index:
0
YAMAKOSHI, S
;
SANADA, T
论文数:
0
引用数:
0
h-index:
0
SANADA, T
;
WADA, O
论文数:
0
引用数:
0
h-index:
0
WADA, O
;
UMEBU, I
论文数:
0
引用数:
0
h-index:
0
UMEBU, I
;
SAKURAI, T
论文数:
0
引用数:
0
h-index:
0
SAKURAI, T
.
APPLIED PHYSICS LETTERS,
1982,
40
(02)
:144
-146
←
1
→
共 8 条
[1]
LOW THRESHOLD CHANNELLED-SUBSTRATE BURIED CRESCENT INGAASP LASERS EMITTING AT 1.54 MU-M
[J].
DEVLIN, WJ
论文数:
0
引用数:
0
h-index:
0
DEVLIN, WJ
;
WALLING, RH
论文数:
0
引用数:
0
h-index:
0
WALLING, RH
;
FIDDYMENT, PJ
论文数:
0
引用数:
0
h-index:
0
FIDDYMENT, PJ
;
HOBBS, RE
论文数:
0
引用数:
0
h-index:
0
HOBBS, RE
;
MURRELL, D
论文数:
0
引用数:
0
h-index:
0
MURRELL, D
;
SPILLETT, RE
论文数:
0
引用数:
0
h-index:
0
SPILLETT, RE
;
STEVENTON, AG
论文数:
0
引用数:
0
h-index:
0
STEVENTON, AG
.
ELECTRONICS LETTERS,
1981,
17
(18)
:651
-653
[2]
DEVLIN WJ, 1981, I PHYS C SER, V63, P567
[3]
INGAASP/INP (1.3-MU-M) BURIED-CRESCENT LASERS WITH SEPARATE OPTICAL CONFINEMENT
[J].
LOGAN, RA
论文数:
0
引用数:
0
h-index:
0
LOGAN, RA
;
VANDERZIEL, JP
论文数:
0
引用数:
0
h-index:
0
VANDERZIEL, JP
;
TEMKIN, H
论文数:
0
引用数:
0
h-index:
0
TEMKIN, H
;
HENRY, CH
论文数:
0
引用数:
0
h-index:
0
HENRY, CH
.
ELECTRONICS LETTERS,
1982,
18
(20)
:895
-896
[4]
TEMPERATURE-DEPENDENCE OF INGAASP DOUBLE-HETEROSTRUCTURE LASER CHARACTERISTICS
[J].
NAHORY, RE
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Holmdel
NAHORY, RE
;
POLLOCK, MA
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Holmdel
POLLOCK, MA
;
DEWINTER, JC
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Holmdel
DEWINTER, JC
.
ELECTRONICS LETTERS,
1979,
15
(21)
:695
-696
[5]
TRANSVERSE-MODE CONTROL IN INGAASP-INP BURIED CRESCENT DIODE-LASERS
[J].
OOMURA, E
论文数:
0
引用数:
0
h-index:
0
OOMURA, E
;
HIGUCHI, H
论文数:
0
引用数:
0
h-index:
0
HIGUCHI, H
;
HIRANO, R
论文数:
0
引用数:
0
h-index:
0
HIRANO, R
;
NAMIZAKI, H
论文数:
0
引用数:
0
h-index:
0
NAMIZAKI, H
;
MUROTANI, T
论文数:
0
引用数:
0
h-index:
0
MUROTANI, T
;
SUSAKI, W
论文数:
0
引用数:
0
h-index:
0
SUSAKI, W
.
ELECTRONICS LETTERS,
1981,
17
(02)
:83
-84
[6]
EFFECT OF SUBSTRATE ORIENTATION ON THE LIQUID-SOLID DISTRIBUTION COEFFICIENTS FOR GAXIN1-XAS IN THE TEMPERATURE-RANGE 600-700-DEGREES-C
[J].
PEARSALL, TP
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
PEARSALL, TP
;
QUILLEC, M
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
QUILLEC, M
;
POLLACK, MA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
POLLACK, MA
.
APPLIED PHYSICS LETTERS,
1979,
35
(04)
:342
-344
[7]
LOW THRESHOLD 1.55 MU-M INGAASP LASERS DOUBLE CLAD WITH INGAASP CONFINING LAYERS
[J].
WESTBROOK, LD
论文数:
0
引用数:
0
h-index:
0
WESTBROOK, LD
;
NELSON, AW
论文数:
0
引用数:
0
h-index:
0
NELSON, AW
;
HATCH, CB
论文数:
0
引用数:
0
h-index:
0
HATCH, CB
.
ELECTRONICS LETTERS,
1981,
17
(25-2)
:952
-954
[8]
DIRECT OBSERVATION OF ELECTRON LEAKAGE IN INGAASP/INP DOUBLE HETEROSTRUCTURE
[J].
YAMAKOSHI, S
论文数:
0
引用数:
0
h-index:
0
YAMAKOSHI, S
;
SANADA, T
论文数:
0
引用数:
0
h-index:
0
SANADA, T
;
WADA, O
论文数:
0
引用数:
0
h-index:
0
WADA, O
;
UMEBU, I
论文数:
0
引用数:
0
h-index:
0
UMEBU, I
;
SAKURAI, T
论文数:
0
引用数:
0
h-index:
0
SAKURAI, T
.
APPLIED PHYSICS LETTERS,
1982,
40
(02)
:144
-146
←
1
→