A FULLY CMOS-COMPATIBLE INFRARED-SENSOR FABRICATED ON SIMOX SUBSTRATES

We report on the use of SIMOX substrates for fabrication of IR radiation thermopiles by CMOS technology. SIMOX technology enables the fabrication of single-crystal leads on thin silicon or silicon oxide membranes. Two p-type silicon/aluminium thermopiles on different membranes are presented. A thermopile with a 4 mum thick, epitaxially grown silicon membrane has a responsivity of 18 V/W and a time constant of 3 ms. Using a 2.5 mum thick silicon oxide membrane, a responsivity of 150 V/W and a time constant of 25 ms are achieved. In addition, the fabrication and properties of an IR absorber made in CMOS technology are presented.