STUDIES ON BOUNDARY BETWEEN ETCHED AND GROUND REGIONS OF GE AND SI SINGLE CRYSTAL SURFACES BY X-RAY DIFFRACTION TOPOGRAPHY

被引：3

作者：

ISHII, Z

机构：

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1961年 / 16卷 / 04期

关键词：

D O I：

10.1143/JPSJ.16.733

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：733 / &

共 15 条

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[3]

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[8] X-RAY OBSERVATION OF THE STRAIN FIELD IN GERMANIUM SINGLE CRYSTALS WITH THE USE OF THE ANOMALOUS TRANSMISSION [J].

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[9]

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