SYMMETRY-BREAKING EFFECTS ON N-BOUND EXCITONS IN GAP

[1] ALTARELLI M, HDB SEMICONDUCTORS

[2] Bir GL., 1974, SYMMETRY STRAIN INDU

[3] Dean P J, 1979, EXCITONS

[4] J-J COUPLING AND LOCAL-FIELD EFFECTS ON N-N PAIR SPECTRA IN GAP [J]. PHYSICAL REVIEW B, 1982, 25 (06): : 3987 - 4001

[5] ISOELECTRONIC DONORS AND ACCEPTORS [J]. PHYSICAL REVIEW LETTERS, 1966, 17 (06) : 312 - &

[6] Jaros M, 1982, DEEP LEVELS SEMICOND

[7] KANE EO, 1975, SEMICONDUCTORS SEMIM

[8] LAGUILLAUME CBA, 1983, PHYSICA B & C, V117, P105, DOI 10.1016/0378-4363(83)90453-9

[9] DEFORMATION POTENTIALS OF THE DIRECT AND INDIRECT ABSORPTION EDGES OF GAP [J]. PHYSICAL REVIEW B, 1979, 19 (04): : 2209 - 2223

[10] EFFECT OF UNIAXIAL-STRESS ON THE EXCITONIC MOLECULE BOUND TO NITROGEN TRAP IN GAP [J]. PHYSICAL REVIEW B, 1980, 22 (10) : 4710 - 4717

[1] ALTARELLI M, HDB SEMICONDUCTORS

[2] Bir GL., 1974, SYMMETRY STRAIN INDU

[3] Dean P J, 1979, EXCITONS

[4] J-J COUPLING AND LOCAL-FIELD EFFECTS ON N-N PAIR SPECTRA IN GAP [J]. PHYSICAL REVIEW B, 1982, 25 (06): : 3987 - 4001

[5] ISOELECTRONIC DONORS AND ACCEPTORS [J]. PHYSICAL REVIEW LETTERS, 1966, 17 (06) : 312 - &

[6] Jaros M, 1982, DEEP LEVELS SEMICOND

[7] KANE EO, 1975, SEMICONDUCTORS SEMIM

[8] LAGUILLAUME CBA, 1983, PHYSICA B & C, V117, P105, DOI 10.1016/0378-4363(83)90453-9

[9] DEFORMATION POTENTIALS OF THE DIRECT AND INDIRECT ABSORPTION EDGES OF GAP [J]. PHYSICAL REVIEW B, 1979, 19 (04): : 2209 - 2223

[10] EFFECT OF UNIAXIAL-STRESS ON THE EXCITONIC MOLECULE BOUND TO NITROGEN TRAP IN GAP [J]. PHYSICAL REVIEW B, 1980, 22 (10) : 4710 - 4717