3-TERMINAL CHARGE-INJECTION DEVICE

被引：4

作者：

JESPERS, PGA ^{[1
]}

MILLET, JM ^{[1
]}

机构：

[1] CATHOLIC UNIV LOUVAIN,LOUVAIN LA NEUVE,BELGIUM

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1976年 / 11卷 / 01期

关键词：

D O I：

10.1109/JSSC.1976.1050688

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：133 / 139

页数：7

共 12 条

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[3]

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[4]

BROJDO S, 1972, Patent No. 3676715

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GERZBERG, L ;

MEINDL, JD .

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[6] INTEGRATED ARRAYS OF SILICON PHOTODETECTORS FOR IMAGE SENSING [J].

DYCK, RH ;

WECKLER, GP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (04) :196-&

[7] ANISOTROPIC ETCHING OF SILICON [J].

LEE, DB .

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[8]

MICHON GJ, 1973, FEB INT SOL STAT CIR, P138

[9]

MICHON GJ, 1974, FEB INT SOL STAT CIR, P26

[10] MEASUREMENTS ON A CHARGE-COUPLED AREA IMAGE SENSOR WITH BLOOMING SUPPRESSION [J].

SEQUIN, CH ;

SHANKOFF, TA ;

SEALER, DA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (06) :331-341

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