GAAS/ALXGA1-XAS SUPERLATTICE WAVE-GUIDE ABSORPTION MODULATORS WITH VERY LOW DRIVE VOLTAGE

被引：9

作者：

MORETTI, AL

VEZZETTI, DJ

CHAMBERS, FA

STAIR, KA

DEVANE, GP

机构：

[1] Amoco Technology Company, Naperville

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1992年 / 4卷 / 06期

关键词：

D O I：

10.1109/68.141973

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the first GaAs/AlxGa1-xAs superlattice waveguide absorption modulators operating at approximately 860 nm which utilize the Wannier-Stark effect. The n = -1 Stark ladder peak is used, which is the transition from the valence band well to the nearest neighbor conduction band well. This peak shifts rapidly with applied electric field, resulting in drive voltages lower than can be achieved using the quantum-confined Stark effect for quantum-well waveguides of similar structure. For a 1000-mu-m long waveguide at 867 nm, we obtain an extinction ratio of approximately 20 dB and a 4 dB attenuation with a drive voltage of 2 V.

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页码：576 / 579

页数：4

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