BAND-STRUCTURE CALCULATIONS OF GEXSI1-X

被引：33

作者：

FERHAT, M

ZAOUI, A

KHELIFA, B

AOURAG, H

机构：

[1] Computational Materials Science Laboratory, Physics Department, University of Sidi-Bel-Abbes

来源：

SOLID STATE COMMUNICATIONS | 1994年 / 91卷 / 05期

关键词：

D O I：

10.1016/0038-1098(94)90643-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The band structure of Ge-Si alloy is calculated in the virtual crystal approximation using the empirical pseudopotential method which incorporates compositional disorder as an effective potential. Various quantities including the bowing parameter of fundamental gap, the energies of several optical gaps, and the crossover of the band gaps are calculated. These results are in excellent agreement with the experimental data. We have also calculated the variation of the bowing for the alloy Si-Ge under pressure.

引用

页码：407 / 411

页数：5

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