DEGRADATION-INDUCED MICROWAVE OSCILLATIONS IN DOUBLE-HETEROSTRUCTURE INJECTION LASERS

被引：30

作者：

YANG, ES ^{[1
]}

MCMULLIN, PG ^{[1
]}

SMITH, AW ^{[1
]}

BLUM, J ^{[1
]}

SHIH, KK ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1974年 / 24卷 / 07期

关键词：

D O I：

10.1063/1.1655202

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：324 / 327

页数：4

共 13 条

[1]

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[4]

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[5] REPRODUCIBLE LIQUID-PHASE-EPITAXIAL GROWTH OF DOUBLE HETEROSTRUCTURE GAAS-ALXGA1-XAS LASER-DIODES [J].

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[7]

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[8] COUPLED LONGITUDINAL MODE PULSING IN SEMICONDUCTOR LASERS [J].

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[9] CW DEGRADATION AT 300 DEGREES K OF GAAS DOUBLE-HETEROSTRUCTURE JUNCTION LASERS .1. EMISSION-SPECTRA [J].

PAOLI, TL ;

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JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) :4108-4112

[10] DEFECT STRUCTURE INTRODUCED DURING OPERATION OF HETEROJUNCTION GAAS LASERS [J].

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APPLIED PHYSICS LETTERS, 1973, 23 (08) :469-471

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