RELATION OF RELAXATION TO ELECTRONIC-ENERGY-LEVEL STRUCTURE ON SI(111) SURFACE

被引：6

作者：

APPELBAUM, JA ^{[1
]}

HAMANN, DR ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW LETTERS | 1976年 / 36卷 / 03期

关键词：

D O I：

10.1103/PhysRevLett.36.168

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：168 / 170

页数：3

共 20 条

[1] SELF-CONSISTENT QUANTUM-THEORY OF CHEMISORPTION - H ON SI(111) [J].

APPELBAUM, JA ;

HAMANN, DR .

PHYSICAL REVIEW LETTERS, 1975, 34 (13) :806-809

[2] SURFACE STATES AND SURFACE BONDS OF SI(111) [J].

APPELBAUM, JA ;

HAMANN, DR .

PHYSICAL REVIEW LETTERS, 1973, 31 (02) :106-109

[3] SURFACE-INDUCED CHARGE DISTURBANCES IN FILLED BANDS [J].

APPELBAUM, JA ;

HAMANN, DR .

PHYSICAL REVIEW B, 1974, 10 (12) :4973-4979

[4] SURFACE-POTENTIAL, CHARGE-DENSITY, AND IONIZATION-POTENTIAL FOR SI(111) - SELF-CONSISTENT CALCULATION [J].

APPELBAUM, JA ;

HAMANN, DR .

PHYSICAL REVIEW LETTERS, 1974, 32 (05) :225-228

[5]

APPELBAUM JA, 1974, 12TH P INT C PHYS SE, P675

[6] EFFECT OF RELAXATION AND RECONSTRUCTION ON ELECTRONIC-ENERGY-LEVEL STRUCTURE OF SI(111) SURFACE [J].

BATRA, IP ;

CIRACI, S .

PHYSICAL REVIEW LETTERS, 1975, 34 (21) :1337-1340

[7] A MODEL FOR SELF-CONSISTENT CLUSTER CALCULATIONS OF ELECTRONIC-STRUCTURE OF DOPED SEMICONDUCTORS BY MEANS OF SCF-X-ALPHA SCATTERED WAVE METHOD [J].

CARTLING, B ;

ROOS, B ;

WAHLGREN, U .

CHEMICAL PHYSICS LETTERS, 1973, 21 (02) :380-384

[8]

HAGSTRUM HD, TO BE PUBLISHED

[9] BOND-ORBITAL MODEL .2. [J].

HARRISON, WA ;

CIRACI, S .

PHYSICAL REVIEW B, 1974, 10 (04) :1516-1527

[10] HYDROGEN ADSORPTION AND SURFACE-STRUCTURES OF SILICON [J].

IBACH, H ;

ROWE, JE .

SURFACE SCIENCE, 1974, 43 (02) :481-492

← 1 2 →