Electrical properties of barium strontium titanate (BST) thin films deposited on various Pt-base electrodes

被引:5
作者
Lee, WJ
Kim, HG
机构
[1] Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Yusong-gu, Taejon, 373-1, Kusong-dong
关键词
D O I
10.1080/10584589508013583
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The crystal structure and electrical properties of(Ba0.5Sr0.5)TiO3 thin films deposited on various Pt-base electrodes by RF magnetron sputtering, have been investigated. Surface morphology and crystallinity of Pt films for bottom electrode changed with deposition temperature for Pt. The Pt films deposited at 400 degrees C by sputtering have perfectly (111) preferred orientation and dense surface with hillock-free morphology. An 100 nm BST film has a dielectric constant of 575 and a leakage current density at 2V of 1.8x10(-7) A/cm(2). It is clear that the bottom electrodes are important in determining preferred orientation and electrical properties of BST thin films. With increasing film thickness of BST, the grain size of BST films gradually increased. Dielectric constant of the BST films deposited at 600 degrees C also increased with increasing grain size. It was measured that the dielectric constant decreases from 758 to 348 with the grain size of 82-32nm in the BST films.
引用
收藏
页码:111 / 119
页数:9
相关论文
共 11 条
[1]  
Al-Shareef H. N., 1993, Integrated Ferroelectrics, V3, P321, DOI 10.1080/10584589308216687
[2]  
BARBOTTIN G, 1986, INSTABILITIES SILICO, V1, P263
[3]  
Koyama K., 1991, International Electron Devices Meeting 1991. Technical Digest (Cat. No.91CH3075-9), P823, DOI 10.1109/IEDM.1991.235298
[4]   ELECTRICAL-PROPERTIES AND CRYSTAL-STRUCTURE OF (BA0.5SR0.5)TIO3 THIN-FILMS PREPARED ON PT/SIO2/SI BY RF MAGNETRON SPUTTERING [J].
LEE, WJ ;
PARK, IK ;
JANG, GE ;
KIM, HG .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (01) :196-199
[5]  
MCMILLAN LD, 1992, ISIF 92, P666
[6]  
MIYASAKA Y, 1990, IEEE 7 INT S APPL FE, P121
[7]  
Scott J. F., 1994, Integrated Ferroelectrics, V4, P61, DOI 10.1080/10584589408018661
[8]  
TAKEMURA K, 1992, ISIF 92, P481
[9]  
VANBUSKIRK PC, 1992, ISIF 92, P473
[10]   (BA+SR)/TI RATIO DEPENDENCE OF THE DIELECTRIC-PROPERTIES FOR (BA.05SR0.5)TIO3 THIN-FILMS PREPARED BY ION-BEAM SPUTTERING [J].
YAMAMICHI, S ;
YABUTA, H ;
SAKUMA, T ;
MIYASAKA, Y .
APPLIED PHYSICS LETTERS, 1994, 64 (13) :1644-1646