LUMINESCENCE FROM ELECTRON-IRRADIATED SILICON - REPLY

被引：3

作者：

JONES, CE

STREETMA.BG

NOONAN, JR

机构：

[1] LEHIGH UNIV,DEPT PHYS,BETHLEHEM,PA 18015

[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[3] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 10期

关键词：

D O I：

10.1063/1.1663108

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：4655 / 4655

页数：1

相关论文

共 5 条

[1] RECOMBINATION LUMINESCENCE FROM ELECTRON-IRRADIATED LI-DIFFUSED SI [J].

JOHNSON, ES ;

COMPTON, WD ;

NOONAN, JR ;

STREETMA.BG .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (12) :5411-5418

[2]

Jones C. E., 1971, Radiation Effects, V9, P83, DOI 10.1080/00337577108242037

[3] TEMPERATURE, STRESS, AND ANNEALING EFFECTS ON LUMINESCENCE FROM ELECTRON-IRRADIATED SILICON [J].

JONES, CE ;

JOHNSON, ES ;

COMPTON, WD ;

NOONAN, JR ;

STREETMA.BG .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (12) :5402-5410

[4]

WALKER J, 1974, J APPL PHYS, V45, pR40

[5]

YUKHNEVICH AV, 1973, SOV PHYS SEMICOND+, V7, P815