RECOMBINATION LUMINESCENCE FROM ELECTRON-IRRADIATED LI-DIFFUSED SI

[1] ELECTRICAL STUDIES OF ELECTRON-IRRADIATED LITHIUM-CONTAINING N-TYPE SILICON [J]. PHYSICAL REVIEW, 1969, 183 (03): : 712 - +

[2] EFFECT OF ELECTRON IRRADIATION ON LITHIUM-DOPED SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (11) : 2405 - +

[3] NEW RADIATIVE RECOMBINATION PROCESSES INVOLVING NEUTRAL DONORS AND ACCEPTORS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1967, 161 (03): : 711 - &

[4] INTERACTION OF LITHIUM WITH IMPURITIES AND DEFECTS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1966, 9 (10) : 364 - &

[5] Li-defect interactions in electron-irradiated n-type silicon [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (10): : 4110 - 4117

[6] TEMPERATURE DEPENDENCE OF VIBRONIC SPECTRA IN IRRADIATED SILICON [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (11): : 1265 - +

[7] EXPERIMENTAL PROOF OF THE EXISTENCE OF A NEW ELECTRONIC COMPLEX IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1960, 4 (07) : 361 - 363

[8] TEMPERATURE, STRESS, AND ANNEALING EFFECTS ON LUMINESCENCE FROM ELECTRON-IRRADIATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (12) : 5402 - 5410

[9] PELL EM, 1960, SOLID STATE PHYSICS, V1

[10] STRESS SPECTRA OF DEFECTS IN DIAMOND [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1965, 86 (551P): : 629 - &

[1] ELECTRICAL STUDIES OF ELECTRON-IRRADIATED LITHIUM-CONTAINING N-TYPE SILICON [J]. PHYSICAL REVIEW, 1969, 183 (03): : 712 - +

[2] EFFECT OF ELECTRON IRRADIATION ON LITHIUM-DOPED SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (11) : 2405 - +

[3] NEW RADIATIVE RECOMBINATION PROCESSES INVOLVING NEUTRAL DONORS AND ACCEPTORS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1967, 161 (03): : 711 - &

[4] INTERACTION OF LITHIUM WITH IMPURITIES AND DEFECTS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1966, 9 (10) : 364 - &

[5] Li-defect interactions in electron-irradiated n-type silicon [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (10): : 4110 - 4117

[6] TEMPERATURE DEPENDENCE OF VIBRONIC SPECTRA IN IRRADIATED SILICON [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (11): : 1265 - +

[7] EXPERIMENTAL PROOF OF THE EXISTENCE OF A NEW ELECTRONIC COMPLEX IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1960, 4 (07) : 361 - 363

[8] TEMPERATURE, STRESS, AND ANNEALING EFFECTS ON LUMINESCENCE FROM ELECTRON-IRRADIATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (12) : 5402 - 5410

[9] PELL EM, 1960, SOLID STATE PHYSICS, V1

[10] STRESS SPECTRA OF DEFECTS IN DIAMOND [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1965, 86 (551P): : 629 - &