HOMOEPITAXIAL GROWTH OF DIAMOND THIN-FILMS BY ELECTRON CYCLOTRON-RESONANCE MICROWAVE PLASMA CHEMICAL-VAPOR-DEPOSITION APPARATUS WITH CO/H2 GASEOUS SOURCE

Homoepitaxy of the diamond thin films has been carried out by employing the ECR microwave plasma CVD apparatus with a CO/H-2 gaseous source. From RHEED observation, it appeared that the surface morphology of (100) oriented film was much better than that of the (110) oriented. The (2 X 1) surface reconstruction remained unchanged even when the film was cooled down in H-2 ambient after the epitaxy was completed. Although the synthetic diamond substrates had nonuniformity in their cathodoluminescence patterns, epitaxial films grown onto them offered uniform ones.