ROOM-TEMPERATURE RESONANT-TUNNELING BIPOLAR-TRANSISTOR XNOR AND XOR INTEGRATED-CIRCUITS

被引：19

作者：

SEABAUGH, AC

TADDIKEN, AH

BEAM, EA

RANDALL, JN

KAO, YC

NEWELL, B

机构：

[1] Central Research Laboratories, Texas Instruments Incorporated, Dallas

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 20期

关键词：

RESONANT TUNNELING DEVICES; BIPOLAR TRANSISTOR CIRCUITS; LOGIC CIRCUITS;

D O I：

10.1049/el:19931199

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first resonant tunnelling bipolar transistor integrated circuits operating at room temperature are demonstrated. The circuits are composed of cointegrated resonant tunnelling bipolar transistors and double heterojunction bipolar transistors bawd on InP substrates. Both a three-transistor XNOR and a seven-transistor XOR logic gate have been demonstrated using a 3 V power supply.

引用

页码：1802 / 1803

页数：2

共 9 条

[1]

BEAM EA, 1992, MATER RES SOC SYMP P, V240, P33

[2] MULTIPLE NEGATIVE TRANSCONDUCTANCE AND DIFFERENTIAL CONDUCTANCE IN A BIPOLAR-TRANSISTOR BY SEQUENTIAL QUENCHING OF RESONANT TUNNELING [J].