RESONANT TUNNELING BIPOLAR-TRANSISTORS USING INALAS INGAAS HETEROSTRUCTURES

被引：13

作者：

FUTATSUGI, T

YAMAGUCHI, Y

MUTO, S

YOKOYAMA, N

SHIBATOMI, A

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 04期

关键词：

D O I：

10.1063/1.342929

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1771 / 1775

页数：5

共 20 条

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[10] EXCELLENT NEGATIVE DIFFERENTIAL RESISTANCE OF INALAS-INGAAS RESONANT TUNNELING BARRIER STRUCTURES GROWN BY MBE [J].

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