SOLAR-CELL CHARACTERISTICS OF HIGH-EFFICIENCY POLYCRYSTALLINE SILICON SOLAR-CELLS USING SOG-CAST WAFERS

被引:8
作者
SHIMOKAWA, R [1 ]
NISHIDA, K [1 ]
SUZUKI, A [1 ]
HAYASHI, Y [1 ]
机构
[1] SHARP CORP,DIV PHOTOVOLTA,NARA 63921,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷 / 10期
关键词
D O I
10.1143/JJAP.26.1667
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1667 / 1673
页数:7
相关论文
共 22 条
[1]   20-PERCENT EFFICIENCY SILICON SOLAR-CELLS [J].
BLAKERS, AW ;
GREEN, MA .
APPLIED PHYSICS LETTERS, 1986, 48 (03) :215-217
[2]   SHORT-CIRCUIT CURRENT OF POLYCRYSTALLINE SILICON SOLAR-CELLS WITH RESPECT TO GRAIN-SIZE AND GRAIN-BOUNDARY RECOMBINATION VELOCITY [J].
DIMITRIADIS, CA .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) :660-662
[3]   EFFECTS ON THE OPEN-CIRCUIT VOLTAGE OF GRAIN-BOUNDARIES WITHIN THE JUNCTION SPACE-CHARGE REGION OF POLYCRYSTALLINE SOLAR-CELLS [J].
FOSSUM, JG ;
LINDHOLM, FA .
ELECTRON DEVICE LETTERS, 1980, 1 (12) :267-269
[4]   THEORY OF GRAIN-BOUNDARY AND INTRAGRAIN RECOMBINATION CURRENTS IN POLYSILICON P-N-JUNCTION SOLAR-CELLS [J].
FOSSUM, JG ;
LINDHOLM, FA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) :692-700
[5]   THEORY OF THE ELECTRICAL AND PHOTO-VOLTAIC PROPERTIES OF POLYCRYSTALLINE SILICON [J].
GHOSH, AK ;
FISHMAN, C ;
FENG, T .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :446-454
[6]   SILICON PHOTO-VOLTAIC CELLS [J].
HALL, RN .
SOLID-STATE ELECTRONICS, 1981, 24 (07) :595-616
[7]  
JOHNSON SM, 1984, 17TH P IEEE PVSC KIS, P1121
[8]  
Koliwad K. M., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P1204
[9]   HIGH-EFFICIENCY POLYCRYSTALLINE SILICON SOLAR-CELLS USING PHOSPHORUS PRETREATMENT [J].
NARAYANAN, S ;
WENHAM, SR ;
GREEN, MA .
APPLIED PHYSICS LETTERS, 1986, 48 (13) :873-875
[10]   EFFECTS OF GRAIN-BOUNDARIES ON THE CURRENT-VOLTAGE CHARACTERISTICS OF POLYCRYSTALLINE SILICON SOLAR-CELLS [J].
NEUGROSCHEL, A ;
MAZER, JA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (02) :225-236