SILICON PHOTO-VOLTAIC CELLS

[1] HEAVILY DOPED SEMICONDUCTORS AND DEVICES [J]. ADVANCES IN PHYSICS, 1978, 27 (06) : 799 - 892

[2] A NEW SOLUTION FOR MINORITY-CARRIER INJECTION INTO THE EMITTER OF A BIPOLAR-TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (07) : 1231 - 1238

[3] [Anonymous], [No title captured]

[4] Arndt R. A., 1975, 11th IEEE Photovoltaic Specialists Conference, P40

[5] Backus C., 1976, SOLAR CELLS

[6] BALIGA BJ, 1980, APPLIED SOLID STAT S

[7] EFFECTIVE MASS AND INTRINSIC CONCENTRATION IN SILICON [J]. SOLID-STATE ELECTRONICS, 1967, 10 (11) : 1039 - &

[8] SIMPLIFIED THEORY OF P-I-N-DIODE [J]. SOLID-STATE ELECTRONICS, 1977, 20 (08) : 709 - 714

[9] RECOMBINATION IN THE END REGIONS OF PIN DIODES [J]. SOLID-STATE ELECTRONICS, 1979, 22 (03) : 293 - 301

[10] TEMPERATURE-DEPENDENCE OF BAND-GAP OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1846 - 1848

[1] HEAVILY DOPED SEMICONDUCTORS AND DEVICES [J]. ADVANCES IN PHYSICS, 1978, 27 (06) : 799 - 892

[2] A NEW SOLUTION FOR MINORITY-CARRIER INJECTION INTO THE EMITTER OF A BIPOLAR-TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (07) : 1231 - 1238

[3] [Anonymous], [No title captured]

[4] Arndt R. A., 1975, 11th IEEE Photovoltaic Specialists Conference, P40

[5] Backus C., 1976, SOLAR CELLS

[6] BALIGA BJ, 1980, APPLIED SOLID STAT S

[7] EFFECTIVE MASS AND INTRINSIC CONCENTRATION IN SILICON [J]. SOLID-STATE ELECTRONICS, 1967, 10 (11) : 1039 - &

[8] SIMPLIFIED THEORY OF P-I-N-DIODE [J]. SOLID-STATE ELECTRONICS, 1977, 20 (08) : 709 - 714

[9] RECOMBINATION IN THE END REGIONS OF PIN DIODES [J]. SOLID-STATE ELECTRONICS, 1979, 22 (03) : 293 - 301

[10] TEMPERATURE-DEPENDENCE OF BAND-GAP OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1846 - 1848