REFLECTIVITY OF GATE IN 1 TO 35EV RANGE

被引：9

作者：

LEVEQUE, G ^{[1
]}

BERTRAND, Y ^{[1
]}

ROBIN, J ^{[1
]}

机构：

[1] UNIV MONTPELLIER 2,CNRS,EQUIPE RECH SPECT LAB,F-34060 MONTPELLIER,FRANCE

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1977年 / 10卷 / 02期

关键词：

D O I：

10.1088/0022-3719/10/2/017

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：343 / 352

页数：10

共 9 条

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[3]

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[4] EXCITON BINDING ENERGIES OF LAYER-TYPE SEMICONDUCTORS GASE AND GATE [J].

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VECCHIA, P .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1971, 48 (02) :729-+

[5] OPTICAL-PROPERTIES OF LAYER COMPOUND GATE [J].

GRASSO, V ;

MONDIO, G ;

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[6] OPTICAL-PROPERTIES AND COLLECTIVE EXCITATIONS IN GASE IN 2 TO 80 EV RANGE [J].

MAMY, R ;

MARTIN, L ;

LEVEQUE, G ;

RAISIN, C .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1974, 62 (01) :201-208

[7] SOME OPTICAL PROPERTIES OF LAYER-TYPE SEMICONDUCTOR GATE [J].

TATSUYAM.C ;

WATANABE, Y ;

HAMAGUCH.C ;

NAKAI, J .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1970, 29 (01) :150-&

[8]

THOMAS J, 1972, J CHEM SOC F2, V5, P755

[9] INVESTIGATION OF ELECTRONIC-STRUCTURE OF GASE AND GATE BY PHOTOELECTRON-SPECTROSCOPY, USING A SYNCHROTRON SOURCE, AND ELECTRON-ENERGY LOSS SPECTROSCOPY [J].

WILLIAMS, RH ;

MCGOVERN, IT ;

MURRAY, RB ;

HOWELLS, M .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1976, 73 (01) :307-316

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