SURFACE AND BULK ELECTRONIC-STRUCTURE OF CE METAL STUDIED BY HIGH-RESOLUTION RESONANT PHOTOEMISSION

被引:151
作者
WESCHKE, E
LAUBSCHAT, C
SIMMONS, T
DOMKE, M
STREBEL, O
KAINDL, G
机构
[1] Institut für Experimentalphysik, Freie Universität Berlin, W-1000 Berlin 33
来源
PHYSICAL REVIEW B | 1991年 / 44卷 / 15期
关键词
D O I
10.1103/PhysRevB.44.8304
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
High-resolution resonant photoemission (PE) at the 4d --> 4f and 3d --> 4f thresholds is applied to study the electronic structure of Ce metal. Due to the different surface sensitivities, the resulting 4f PE spectra, which are almost free of non-4f background, reflect directly a substantial change in 4f electronic structure of alpha-Ce metal towards gamma-like behavior at the surface. This finding resolves a longstanding discrepancy between the results of surface-sensitive 4f PE and those of bulk model calculations. Pure surface and bulk 4f PE signals are derived for alpha-Ce metal.
引用
收藏
页码:8304 / 8307
页数:4
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