SURFACE AND BULK ELECTRONIC-STRUCTURE OF CE METAL STUDIED BY HIGH-RESOLUTION RESONANT PHOTOEMISSION

被引：151

作者：

WESCHKE, E

LAUBSCHAT, C

SIMMONS, T

DOMKE, M

STREBEL, O

KAINDL, G

机构：

[1] Institut für Experimentalphysik, Freie Universität Berlin, W-1000 Berlin 33

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.44.8304

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-resolution resonant photoemission (PE) at the 4d --> 4f and 3d --> 4f thresholds is applied to study the electronic structure of Ce metal. Due to the different surface sensitivities, the resulting 4f PE spectra, which are almost free of non-4f background, reflect directly a substantial change in 4f electronic structure of alpha-Ce metal towards gamma-like behavior at the surface. This finding resolves a longstanding discrepancy between the results of surface-sensitive 4f PE and those of bulk model calculations. Pure surface and bulk 4f PE signals are derived for alpha-Ce metal.

引用

页码：8304 / 8307

页数：4

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