SOME ETCH PROPERTIES OF DOPED AND UNDOPED SILICON-OXIDE FILMS FORMED BY ATMOSPHERIC-PRESSURE AND PLASMA-ACTIVATED CHEMICAL VAPOR-DEPOSITION

被引：5

作者：

GUALANDRIS, F ^{[1
]}

PIGNATEL, GU ^{[1
]}

ROJAS, S ^{[1
]}

机构：

[1] SGS CORP,PHOENIX,AZ 85022

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 06期

关键词：

D O I：

10.1116/1.582947

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1604 / 1608

页数：5

共 26 条

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[6]

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[7]

GUALANDRIS F, 1984, 19 PHYS CHEM NAT S P

[8] PLASMA-ENHANCED CVD - OXIDES, NITRIDES, TRANSITION-METALS, AND TRANSITION-METAL SILICIDES [J].

HESS, DW .

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[9]

KERN W, 1976, RCA REV, V37, P3

[10]

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