2-LEVEL SYSTEMS IN HYDROGENATED AMORPHOUS-SILICON - NMR-STUDIES

被引：9

作者：

BOYCE, JB

STUTZMANN, M

READY, SE

机构：

来源：

PHYSICAL REVIEW B | 1985年 / 32卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.32.6062

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

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页码：6062 / 6065

页数：4

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