THICKNESS DEPENDENCE OF THE PROPERTIES OF PLASMA-DEPOSITED A-SI-H FILMS - NMR-STUDIES

被引:8
作者
BOYCE, JB
THOMPSON, MJ
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D O I
10.1016/0022-3093(84)90310-7
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TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
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页码:127 / 132
页数:6
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共 14 条
[1]  
ABRAGAM A, 1961, PRINCIPLES NUCLEAR M, P382
[2]   THICKNESS AND TEMPERATURE-DEPENDENCE OF THE CONDUCTIVITY OF PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON [J].
AST, DG ;
BRODSKY, MH .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 41 (03) :273-285
[3]   H-1-NMR IN ALPHA-SI [J].
CARLOS, WE ;
TAYLOR, PC .
PHYSICAL REVIEW B, 1982, 26 (07) :3605-3616
[4]   MOLECULAR-H2 - NUCLEAR-SPIN-RELAXATION CENTERS FOR PROTONS IN A-SI-H [J].
CONRADI, MS ;
NORBERG, RE .
PHYSICAL REVIEW B, 1981, 24 (04) :2285-2288
[5]  
HASAGAWA S, 1982, PHILOS MAG B, V46, P239
[6]   MICROSTRUCTURE OF PLASMA-DEPOSITED A-SI-H FILMS [J].
KNIGHTS, JC ;
LUJAN, RA .
APPLIED PHYSICS LETTERS, 1979, 35 (03) :244-246
[7]   DEUTERON AND PROTON MAGNETIC-RESONANCE IN A-SI-(D,H) [J].
LEOPOLD, DJ ;
BOYCE, JB ;
FEDDERS, PA ;
NORBERG, RE .
PHYSICAL REVIEW B, 1982, 26 (11) :6053-6066
[8]   EVOLUTION OF MICROSTRUCTURE IN AMORPHOUS HYDROGENATED SILICON [J].
MESSIER, R ;
ROSS, RC .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) :6220-6225
[9]   HYDROGEN PROFILING IN AMORPHOUS-SILICON FILMS AND P-N-JUNCTIONS [J].
MULLER, G ;
DEMOND, F ;
KALBITZER, S ;
DAMJANTSCHITSCH, H ;
MANNSPERGER, H ;
SPEAR, WE ;
LECOMBER, PG ;
GIBSON, RA .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 41 (05) :571-579
[10]   THICKNESS DEPENDENT PROPERTIES OF SPUTTERED A-SI-H FROM RAMAN AND CONDUCTIVITY MEASUREMENT [J].
RANCHOUX, B ;
JOUSSE, D ;
BRUYERE, JC ;
DENEUVILLE, A .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :185-188