THICKNESS DEPENDENT PROPERTIES OF SPUTTERED A-SI-H FROM RAMAN AND CONDUCTIVITY MEASUREMENT

被引：9

作者：

RANCHOUX, B

JOUSSE, D

BRUYERE, JC

DENEUVILLE, A

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1983年 / 59-6卷 / DEC期

关键词：

D O I：

10.1016/0022-3093(83)90552-5

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：185 / 188

页数：4

共 11 条

[1]

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[2]

BRUYERE JC, 1980, J PHYS LETT-PARIS, V41, pL27, DOI 10.1051/jphyslet:0198000410202700

[3] X-RAYS AND RAMAN SENSITIVITY DIFFERENCES IN HETEROGENEOUS A-SI-H FROM PURE LPCVD [J].

BUSTARRET, E ;

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BRUNEL, L .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :205-208

[4]

BUSTARRET E, 1982, 16TH P INT C PHYS SE

[5]

Currie J., UNPUB

[6] THICKNESS DEPENDENCE OF HYDROGEN IN A-SI-H FILMS DEPOSITED ON C-SI [J].

CURRIE, JF ;

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BRUYERE, JC ;

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JOURNAL DE PHYSIQUE LETTRES, 1981, 42 (15) :L373-L376

[7]

DENEUVILLE A, 1981, 9TH P INT C AM LIQ S, P733

[8] PLASMA-HYDROGENATION EFFECTS AND THE THICKNESS DEPENDENCE OF ELECTRICAL-PROPERTIES AND ELECTRON-SPIN-RESONANCE IN UNDOPED CVD A-SI [J].

HASEGAWA, S ;

ANDO, D ;

KURATA, Y ;

SHIMIZU, T .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 47 (02) :139-149

[9] THICKNESS DEPENDENCE OF ELECTRICAL AND OPTICAL-PROPERTIES AND ELECTRON-SPIN-RESONANCE IN UNDOPED A-SI-H [J].

HASEGAWA, S ;

IMAI, Y .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 46 (03) :239-251

[10]

RANCHOUX B, UNPUB

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