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PLASMA-HYDROGENATION EFFECTS AND THE THICKNESS DEPENDENCE OF ELECTRICAL-PROPERTIES AND ELECTRON-SPIN-RESONANCE IN UNDOPED CVD A-SI

被引：17
作者：
HASEGAWA, S
ANDO, D
KURATA, Y
SHIMIZU, T
机构：
来源：
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1983年 / 47卷 / 02期
关键词：
D O I：
10.1080/13642812.1983.9728426
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：139 / 149
页数：11
相关论文
共 12 条
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    [J]. PHILOSOPHICAL MAGAZINE, 1977, 36 (03): : 695 - 712
  • [2] THICKNESS AND TEMPERATURE-DEPENDENCE OF THE CONDUCTIVITY OF PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON
    AST, DG
    BRODSKY, MH
    [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 41 (03): : 273 - 285
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  • [4] THICKNESS DEPENDENCE OF ELECTRICAL AND OPTICAL-PROPERTIES AND ELECTRON-SPIN-RESONANCE IN UNDOPED A-SI-H
    HASEGAWA, S
    IMAI, Y
    [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 46 (03): : 239 - 251
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    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 219 - 224
  • [6] PHYSICAL-PROPERTIES OF AMORPHOUS CVD SILICON
    HIROSE, M
    [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 705 - 714
  • [7] HYDROGENATION OF EVAPORATED AMORPHOUS SILICON FILMS BY PLASMA TREATMENT
    KAPLAN, D
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    [J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 440 - 442
  • [8] LECOMBER PG, 1973, 5TH P INT C AM LIQ S, P245
  • [9] EFFECT OF HYDROGENATION ON DOPED ALPHA-SI PREPARED BY CVD
    MAGARINO, J
    FRIEDERICH, A
    KAPLAN, D
    DENEUVILLE, A
    [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 737 - 740
  • [10] POST-HYDROGENATION OF CVD DEPOSITED A-SI FILMS
    SOL, N
    KAPLAN, D
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    DUBREUIL, D
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 291 - 296
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