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PLASMA-HYDROGENATION EFFECTS AND THE THICKNESS DEPENDENCE OF ELECTRICAL-PROPERTIES AND ELECTRON-SPIN-RESONANCE IN UNDOPED CVD A-SI
被引:17
作者
:
HASEGAWA, S
论文数:
0
引用数:
0
h-index:
0
HASEGAWA, S
ANDO, D
论文数:
0
引用数:
0
h-index:
0
ANDO, D
KURATA, Y
论文数:
0
引用数:
0
h-index:
0
KURATA, Y
SHIMIZU, T
论文数:
0
引用数:
0
h-index:
0
SHIMIZU, T
机构
:
来源
:
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES
|
1983年
/ 47卷
/ 02期
关键词
:
D O I
:
10.1080/13642812.1983.9728426
中图分类号
:
T [工业技术];
学科分类号
:
08 ;
摘要
:
引用
收藏
页码:139 / 149
页数:11
相关论文
共 12 条
[11]
THICKNESS DEPENDENCE OF THE PHOTOCONDUCTIVITY OF PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON
SOLOMON, I
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
SOLOMON, I
BRODSKY, MH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
BRODSKY, MH
[J].
JOURNAL OF APPLIED PHYSICS,
1980,
51
(08)
: 4548
-
4549
[12]
INFLUENCE OF INTERFACE CHARGES ON TRANSPORT MEASUREMENTS IN AMORPHOUS SILICON FILMS
SOLOMON, I
论文数:
0
引用数:
0
h-index:
0
机构:
THOMSON CSF,LCR,F-91401 ORSAY,FRANCE
THOMSON CSF,LCR,F-91401 ORSAY,FRANCE
SOLOMON, I
DIETL, T
论文数:
0
引用数:
0
h-index:
0
机构:
THOMSON CSF,LCR,F-91401 ORSAY,FRANCE
THOMSON CSF,LCR,F-91401 ORSAY,FRANCE
DIETL, T
KAPLAN, D
论文数:
0
引用数:
0
h-index:
0
机构:
THOMSON CSF,LCR,F-91401 ORSAY,FRANCE
THOMSON CSF,LCR,F-91401 ORSAY,FRANCE
KAPLAN, D
[J].
JOURNAL DE PHYSIQUE,
1978,
39
(11):
: 1241
-
1246
←
1
2
→
共 12 条
[11]
THICKNESS DEPENDENCE OF THE PHOTOCONDUCTIVITY OF PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON
SOLOMON, I
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
SOLOMON, I
BRODSKY, MH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
BRODSKY, MH
[J].
JOURNAL OF APPLIED PHYSICS,
1980,
51
(08)
: 4548
-
4549
[12]
INFLUENCE OF INTERFACE CHARGES ON TRANSPORT MEASUREMENTS IN AMORPHOUS SILICON FILMS
SOLOMON, I
论文数:
0
引用数:
0
h-index:
0
机构:
THOMSON CSF,LCR,F-91401 ORSAY,FRANCE
THOMSON CSF,LCR,F-91401 ORSAY,FRANCE
SOLOMON, I
DIETL, T
论文数:
0
引用数:
0
h-index:
0
机构:
THOMSON CSF,LCR,F-91401 ORSAY,FRANCE
THOMSON CSF,LCR,F-91401 ORSAY,FRANCE
DIETL, T
KAPLAN, D
论文数:
0
引用数:
0
h-index:
0
机构:
THOMSON CSF,LCR,F-91401 ORSAY,FRANCE
THOMSON CSF,LCR,F-91401 ORSAY,FRANCE
KAPLAN, D
[J].
JOURNAL DE PHYSIQUE,
1978,
39
(11):
: 1241
-
1246
←
1
2
→