EFFECT OF HYDROGENATION ON DOPED ALPHA-SI PREPARED BY CVD

被引：9

作者：

MAGARINO, J ^{[1
]}

FRIEDERICH, A ^{[1
]}

KAPLAN, D ^{[1
]}

DENEUVILLE, A ^{[1
]}

机构：

[1] CNRS,TRANSIT PHASES LAB,F-38042 GRENOBLE,FRANCE

来源：

JOURNAL DE PHYSIQUE | 1981年 / 42卷 / NC4期

关键词：

D O I：

10.1051/jphyscol:19814161

中图分类号：

学科分类号：

摘要：

引用

页码：737 / 740

页数：4

共 7 条

[1] TEMPERATURE-DEPENDENCE OF THE REFRACTIVE-INDEX OF HYDROGENATED AMORPHOUS-SILICON AND IMPLICATIONS FOR ELECTROREFLECTANCE EXPERIMENTS [J].

BRODSKY, MH ;

LEARY, PA .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :487-492

[2] GAP STATES AND ELECTRON-SPIN-RESONANCE OF BORON-DOPED CVD AMORPHOUS-SILICON [J].

NAKASHITA, T ;

HIROSE, M ;

OSAKA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (03) :471-475

[3] INFRARED AND FAR-INFRARED ABSORPTION OF B-DOPED AND P-DOPED AMORPHOUS SI [J].

SHEN, SC ;

CARDONA, M .

PHYSICAL REVIEW B, 1981, 23 (10) :5322-5328

[4] POST-HYDROGENATION OF CVD DEPOSITED A-SI FILMS [J].

SOL, N ;

KAPLAN, D ;

DIEUMEGARD, D ;

DUBREUIL, D .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :291-296

[5] ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE [J].

SPEAR, WE ;

LECOMBER, PG .

PHILOSOPHICAL MAGAZINE, 1976, 33 (06) :935-949

[6] EXPLANATION OF LIGHT-INDUCED ELECTRON-SPIN-RESONANCE IN A-SI-H - DANGLING BONDS WITH A POSITIVE CORRELATION-ENERGY [J].

STREET, RA ;

BIEGELSEN, DK .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :651-656

[7] SUBSTITUTIONAL DOPING OF CHEMICALLY VAPOR-DEPOSITED AMORPHOUS SILICON [J].

TANIGUCHI, M ;

HIROSE, M ;

OSAKA, Y .

JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) :126-131

← 1 →