GROWTH OF INDIUM-TIN-OXIDE THIN-FILMS BY ATOMIC LAYER EPITAXY

被引：41

作者：

ASIKAINEN, T

RITALA, M

LESKELA, M

机构：

[1] Department of Chemistry, University of Helsinki

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1995年 / 142卷 / 10期

关键词：

D O I：

10.1149/1.2050018

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Indium-tin-oxide thin films were deposited by atomic layer epitaxy at 500C degrees using InCl3, SnCl4, and water as precursors. The films were characterized by means of x-ray diffraction, scanning electron microscopy, energy dispersive x-ray analysis, polarography, and by optical and electrical measurements. The films had polycrystalline In2O3 structure. In addition, the SnO2 phase was detected in films containing the highest tin contents. High transparencies and resistivities in the order of 2.4 x 10(-4) Omega cm could be achieved by optimizing the tin doping procedure. Postannealing decreased the resistivity about 5%.

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页码：3538 / 3541

页数：4

相关论文

共 25 条

[1] GROWTH OF IN2O3 THIN-FILMS BY ATOMIC LAYER EPITAXY [J].

ASIKAINEN, T ;

RITALA, M ;

LESKELA, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (11) :3210-3213

[2] ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS INDIUM OXIDE [J].

BELLINGHAM, JR ;

PHILLIPS, WA ;

ADKINS, CJ .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1990, 2 (28) :6207-6221

[3] TRANSPARENT CONDUCTORS - A STATUS REVIEW [J].

CHOPRA, KL ;

MAJOR, S ;

PANDYA, DK .

THIN SOLID FILMS, 1983, 102 (01) :1-46

[4]

DAWAR AL, 1984, J MATER SCI, V19, P1, DOI 10.1007/BF02403106

[5]

ENOKI H, 1991, J MATER SCI, V26, P4110, DOI 10.1007/BF02402954

[6]

FRANK G, 1978, PHYS STATUS SOLIDI A, V52, P231

[7] OPTICAL AND ELECTRICAL PROPERTIES OF DOPED IN2O3 FILMS [J].

KOSTLIN, H ;

JOST, R ;

LEMS, W .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 29 (01) :87-93

[8] STUDIES ON THE ELECTRICAL AND OPTICAL-PROPERTIES OF REACTIVE ELECTRON-BEAM EVAPORATED INDIUM TIN OXIDE-FILMS [J].

MANIVANNAN, P ;

SUBRAHMANYAM, A .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1993, 26 (09) :1510-1515

[9] STRUCTURAL STUDY OF TIN-DOPED INDIUM OXIDE THIN-FILMS USING X-RAY ABSORPTION-SPECTROSCOPY AND X-RAY-DIFFRACTION .2. TIN ENVIRONMENT [J].

PARENT, P ;

DEXPERT, H ;

TOURILLON, G ;

GRIMAL, JM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (01) :282-285

[10] STRUCTURAL STUDY OF TIN-DOPED INDIUM OXIDE THIN-FILMS USING X-RAY ABSORPTION-SPECTROSCOPY AND X-RAY-DIFFRACTION .1. DESCRIPTION OF THE INDIUM SITE [J].

PARENT, P ;

DEXPERT, H ;

TOURILLON, G ;

GRIMAL, JM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (01) :276-281