COMPARISON OF LARGE SIGNAL MODELS FOR JUNCTION TRANSISTORS

被引：37

作者：

HAMILTON, DJ

NARUD, JA

LINDHOLM, FA

机构：

来源：

关键词：

D O I：

10.1109/PROC.1964.2867

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：239 / &

共 50 条

[31] LARGE-SIGNAL TRANSIENT RESPONSE OF JUNCTION TRANSISTORS [J].

MOLL, JL .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (12) :1773-1784

[32]

MOLL JL, 1954, P IRE, V42, P1273

[33]

NANAVATI RP, 1960, IRE T, VED 7, P9

[34]

NANAVATTI RP, 1962, IRE T ELECTRON DEVIC, VED 9, P494

[35]

PATERSON DG, 1959, SEMICONDUCTOR PRODUC, V2, P35

[36]

Peterson D G., 1962, IRE T, P296

[37]

PHILLIPS AB, 1962, TRANSISTOR ENGINEERI

[38]

PRITCHARD RL, 1959, P IRE, V42, P786

[39]

SEVERIN E, 1961, SEMICOND PROD, V4, P37

[40]

SIMMONS CD, 1958, SEMICONDUCTOR PRODUC, V1, P14