SINGLE-CRYSTAL SN/GE SUPERLATTICES ON GE SUBSTRATES - GROWTH AND STRUCTURAL-PROPERTIES

被引：57

作者：

WEGSCHEIDER, W

EBERL, K

MENCZIGAR, U

ABSTREITER, G

机构：

[1] Walter Schottky Institut, Technische Universität München

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 09期

关键词：

D O I：

10.1063/1.104264

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Short-period strained-layer α-Sn/Ge superlattices lattice matched to Ge(001) substrates have been synthesized for the first time. The thin, tetragonally distorted α-Sn layers are stabilized by a modified molecular beam epitaxy technique with large modulation of substrate temperature during growth. Optimization of growth conditions is achieved via in situ Auger electron spectroscopy and low-energy electron diffraction. This new kind of strained-layer superlattice is characterized by transmission electron microscopy, x-ray diffraction, and Raman scattering. Distinct superlattice effects are observed in the structural and phonon properties of the samples.

引用

页码：875 / 877

页数：3

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