RELATIONSHIP BETWEEN HALL CONSTANT AND CARRIER DENSITIES IN POLYCRYSTALLINE SEMICONDUCTOR FILM

被引：10

作者：

BENNETT, MS

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 09期

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D O I：

10.1063/1.335769

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：3470 / 3475

页数：6

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共 8 条

[1] TRANSPORT PROPERTIES OF POLYCRYSTALLINE SILICON FILMS [J].

BACCARANI, G ;

RICCO, B ;

SPADINI, G .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) :5565-5570

[2] INTERPRETATION OF HALL AND PHOTO-HALL EFFECTS IN INHOMOGENEOUS MATERIALS [J].

BUBE, RH .

APPLIED PHYSICS LETTERS, 1968, 13 (04) :136-&

[3] DOPANT SEGREGATION IN POLYCRYSTALLINE SILICON [J].

MANDURAH, MM ;

SARASWAT, KC ;

HELMS, CR ;

KAMINS, TI .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) :5755-5763

[4] HALL-MOBILITY OF POLYCRYSTALLINE SILICON [J].

MARUSKA, HP ;

GHOSH, AK ;

ROSE, A ;

FENG, T .

APPLIED PHYSICS LETTERS, 1980, 36 (05) :381-383

[5] THE HALL-EFFECT IN POLYCRYSTALLINE AND POWDERED SEMICONDUCTORS [J].

ORTON, JW ;

POWELL, MJ .

REPORTS ON PROGRESS IN PHYSICS, 1980, 43 (11) :1263-1307

[6]

PUTLEY EH, 1960, HALL EFFECT RELATED, P105

[7]

RHODERICK EH, 1978, METAL SEMICONDUCTOR, P79

[8] ELECTRICAL PROPERTIES OF POLYCRYSTALLINE SILICON FILMS [J].

SETO, JYW .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) :5247-5254