A NOTE ON THE PRESSURE-DEPENDENCE OF THE EL2 LEVEL IN GALLIUM-ARSENIDE

被引：1

作者：

DZWIG, P

机构：

来源：

SOLID STATE COMMUNICATIONS | 1983年 / 46卷 / 04期

关键词：

D O I：

10.1016/0038-1098(83)90657-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：305 / 307

页数：3

共 10 条

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[5]

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[8] PHOTOCAPACITANCE MEASUREMENTS ON DEEP LEVELS IN GAAS UNDER HYDROSTATIC-PRESSURE [J].

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[9] PRESSURE-DEPENDENCE OF DEEP LEVEL ASSOCIATED WITH OXYGEN IN NORMAL-GAAS [J].

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[10]

1981, CRC HDB CHEM PHYSICS

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