PHOTOCAPACITANCE MEASUREMENTS ON DEEP LEVELS IN GAAS UNDER HYDROSTATIC-PRESSURE

被引：27

作者：

WHITE, AM

PORTEOUS, P

SHERMAN, WF

STADTMULLER, AA

机构：

[1] ROYAL RADAR ESTAB,MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND

[2] UNIV LONDON,KINGS COLL,LONDON WC2R 2LS,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1977年 / 10卷 / 17期

关键词：

D O I：

10.1088/0022-3719/10/17/002

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：L473 / L476

页数：4

共 7 条

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[2] GRUSHKO NS, 1975, SOV PHYS SEMICOND+, V9, P37
[3] GRUSHKO NS, 1975, SOV PHYS SEMICOND+, V8, P1179
[4] DEPENDENCE OF DIRECT ENERGY-GAP OF GAAS ON HYDROSTATIC-PRESSURE
WELBER, B
CARDONA, M
KIM, CK
RODRIGUEZ, S
[J]. PHYSICAL REVIEW B, 1975, 12 (12): : 5729 - 5738
[5] White A. M., 1977, Proceedings of the 6th International Symposium on Gallium Arsenide and Related Compounds, P58
[6] PHOTOCAPACITANCE EFFECTS OF DEEP TRAPS IN EPITAXIAL GAAS
WHITE, AM
DEAN, PJ
PORTEOUS, P
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 3230 - 3239
[7] DEEP TRAPS IN GAAS REVEALED AT HIGH-RESOLUTION BY SIMPLE FAST PHOTOCAPACITANCE METHODS
WHITE, AM
PORTEOUS, P
DEAN, PJ
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (01) : 91 - 107