ULTIMATE FET STRUCTURES

被引：2

作者：

ESAKI, L

CHANG, LL

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1965年 / 53卷 / 12期

关键词：

D O I：

10.1109/PROC.1965.4497

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2117 / &

共 8 条

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[3]

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[5] A UNIPOLAR FIELD-EFFECT TRANSISTOR [J].

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PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1365-1376

[6]

WEGENER HAR, 1959, IRE T EL DEV, VED 6, P442

[7] TFT - NEW THIN-FILM TRANSISTOR [J].

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[8] MULTICHANNEL FIELD-EFFECT TRANSISTOR [J].

ZULEEG, R ;

HINKLE, VO .