STUDIES OF THE PHOTOEMISSION OF SEMICONDUCTORS

被引:14
作者
BERNDT, M
GORLICH, P
机构
来源
PHYSICA STATUS SOLIDI | 1963年 / 3卷 / 06期
关键词
D O I
10.1002/pssb.19630030602
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
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页码:963 / 981
页数:19
相关论文
共 151 条
[1]   WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J].
ALLEN, FG ;
GOBELI, GW .
PHYSICAL REVIEW, 1962, 127 (01) :150-&
[2]   ELECTRON SCATTERING AND THE PHOTOEMISSION FROM CESIUM ANTIMONIDE [J].
APKER, L ;
TAFT, E ;
DICKEY, J .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1953, 43 (02) :78-80
[3]   PHOTOELECTRIC EMISSION AND CONTACT POTENTIALS OF SEMICONDUCTORS [J].
APKER, L ;
TAFT, E ;
DICKEY, J .
PHYSICAL REVIEW, 1948, 74 (10) :1462-1474
[4]  
APPELT G, 1960, ANN PHYS 7, V6, P67
[5]  
ARSENEVAGEIL AN, 1961, FIZ TVERD TELA, V3, P3621
[6]  
ARSENJEWAHEIL AN, 1957, VNESNIJ FOTOEFFEKT S
[7]  
ARSENJEWAHEIL AN, 1961, FIZ TVERD TELA, V3, P1622
[8]   Photoelectric properties of thin films of alkali metals [J].
Asao, S. .
PHYSICS-A JOURNAL OF GENERAL AND APPLIED PHYSICS, 1932, 2 (01) :12-20
[9]   SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].
BARDEEN, J .
PHYSICAL REVIEW, 1947, 71 (10) :717-727
[10]  
BIRKS JB, 1961, BRIT J APPL PHYS, V12, P519